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Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates

  • Isao Yamada (a1)

Abstract

The effects of ion beam bombardment during ionized cluster beam (ICB) deposition of metal films on Si(111) and Si(100) substrates have been discussed. In the case of Al deposition, films have been epitaxially deposited on Si(lll) and Si(100) substrates at near room temperature. On Si(111) substrates, nearly perfect Al single crystal films could be formed. On Si(100) substrates, Al bicrystals have been grown epitaxially. A remarkable fact concerning these results is that the epitaxial films could be formed at nearly room temperature and on a large lattice mismatch (25%) substrate surface. Atomic resolution TEM analysis suggests that the epitaxy of Al occurs not only on Si surfaces but also at Al/Al grain boundaries. These epitaxial films exhibit extremely high thermal stability and long electromigration life time. To understand the deposition features and film characteristics, the effects of ICB bombardment on the film growth at the initial stage of the deposition and the resultant film structure have been studied. The results show that the role of very low energy ion bombardment is especially important in forming epitaxial metal films. Depositions of Au and Cu on Si substrates have also been made to understand whether ICB deposition may improve the characteristics of other metal films. Preliminary results of these film depositions are also obtained.

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[1] Takagi, T., Ionized-Cluster Beam Deposition and Epitaxy, (Noyes Publications, New Jersey, 1988).
[2] Yamada, I., Inokawa, H., and Takagi, T., J. Appl. Phys., 56, 2746 (1984).
[3] Yamada, I., Palmstrom, C.J., kennedy, E., Mayer, J.W., Inokawa, H. and Takagi, T. in Layered Structures, Epitaxy, and Interfaces, edited by Gibson, J.M. and Dawson, L.R. (Mater. Res. Soc. Proc., 37, Pittsburgh, PA 1985) pp.401406.
[4] Yamada, I. and Takagi, T., IEEE Trans., ED–34, 1018 (1987).
[5] Yamada, I., Levenson, L.L., Usui, H., and Takagi, T. in Materials Modification and Growth Using Ion Beams, edited by Gibson, U.J., White, A. and Pronko, P.P. (Mater. Res. Soc. Proc., 93, Pittsburgh, PA 1987) pp.253258.
[6] Yamada, I., Usui, H., and Takagi, T., J.Phys. Chem., 91, 2463 (1987).
[7] Yamamura, Y., Yamada, I. and Takagi, T., presented at the 7th Int. Conf. on Ion Implantation Technology, Kyoto 1988. accepted for Nucl. Instr. and Methd.
[8] Levenson, L.L., Asano, M., Tanaka, T., Usui, H., Yamada, I., and Takagi, T., J. Vac. Sci, Technol., A6, 1552 (1988).
[9] Levenson, L.L., Usui, H., Yamada, I., Takagi, T., and Swartzlander, A.B., presented at 1988 AVS meeting, Atlanta, GA, October 1988. Accepted for publication in J.Vac. Sci. Technol.
[10] Yamada, I., Usui, H., and Takagi, T., Nuc. Inst. and Methd., B33, 108 (1988).
[11] Dahmen, U., Hetherington, C.J.D., Douin, J. and Westmacott, K.H., presented at the 1988 MRS Fall Meeting, Boston, Mass., 1988.
[12] Hiraki, A., Surface Sci., 168, 74 (1986).
[13] Yamada, I., Usui, H., Harumoto, H. and Takagi, T. in Laser and Particle-Beam Chemical Processing for Microelectronics, edited by Ehrilich, D.J., Higashi, G.S., and Oprysko, M.M. (Mater. Res. Soc. Proc., 101, Pittsburgh, PA 1988) pp.195200.
[14] Sosnowski, M. and Yamada, I., presented at the 7th Int. Conf. on Ion Implantation Technology, Kyoto 1988. accepted for Nucl.Instr. & Methd.

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Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates

  • Isao Yamada (a1)

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