Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T13:06:25.354Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Ion Bombardment on Chemical Interactions at SiC Surface and AI/SiC Interfaces

Published online by Cambridge University Press:  03 September 2012

Heather L. Beck ,
Moon-H. Lee  and
Fumio S. Ohuchi
Heather L. Beck
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195, USA
Moon-H. Lee
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195, USA
Fumio S. Ohuchi
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195, USA
Get access

Abstract

An investigation into the SiC surface and its interaction with aluminum, in particular, focusing on the effect of ion bombardment and adsorption of oxygen, is described. Stoichiometric and carbon rich and SiC surfaces were produced and analyzed “in situ” by Auger electron spectroscopy and x-ray photoelectron spectroscopy. Cubic SiC shows preferential sputtering under Ar ion bombardment, leading to carbon rich surface, whereas high temperature annealing also causes carbon rich surface. Activity of these surfaces was compared with oxygen and aluminum adsorption. Stoichiometrically sputtered surface showed vastly increased oxygen affinity, whereas carbon-rich sputtered surfaces did not. Aluminum deposition caused significant Al-C interaction for the stoichometric ion-bombarded surface. Aluminum carbide was induced catalytically upon heating in the presence of oxygen. Carbon-rich surfaces had, however, no significant interactions with as-deposited Al due to strong surface C-C bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 253
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Suga, T., Miyazawa, K. and , Y Yamagata, Proc. MRS Int'l Mtg. Adv. Mats., 8: 257(1989).Google Scholar
[2] Suga, T. and Miyazawa, K., Metal-Ceramic Interfaces. Acta-Scripta Metallurica Proceedings Series, Volume 4, Pergammon Press, 1990.Google Scholar
[3] Ohuchi, F. S. and Suga, T., Proc. 3rd IUMRS-ICAM-93, Ikebukuro, Tokyo (1993).Google Scholar
[4] Peteves, S. D., Tambuyser, P. and Helbach, P., J. Mat. Sci., 25(8): 3765(1990).Google Scholar
[5] Davis, R., in The Physics and Chemistry of Carbides. Nitrides and Borides, Kluwer Academic Publishers, 1990.Google Scholar
[6] Hu, X., Hong, Y., Kohyama, M. and Ohuchi, F. S., J. Phy., C 7, 1069 (1995).Google Scholar
[7] Hu, X., Masters Thesis, University of Washington, 1995.Google Scholar
[8] Beck, H. L., Masters Thesis, University of Washington, 1996.Google Scholar
[9] Chang, C., Tsong, I., Wang, Y. C. and Davis, R. F., Surf. Sci., 256: 354(1991).Google Scholar
[10] Bermudez, V. M. and Kaplan, R., Phy. Rev. B, 44: 149(1991).Google Scholar
[11] Dayan, M., J. Vac. Sci. and Technol. A, 3(2): 361(1985).Google Scholar
[12] Dayan, M., J. Vac. Sci. and Technol. A, 4(1): 38(1986).Google Scholar
[13] Wenchang, L., Kaiming, Z. and Xide, X., Phy. Rev. B, 45(19): 11048(1992).Google Scholar