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The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

  • H. Yang (a1), H Niimi (a1), Y. Wu (a1) and G. Lucovsky (a1)

Abstract

Mesarjian et al. were the first to recognize the effects of suboxide interfacial transition regions at Si-SiO2 interfaces on tunneling oscillations in the Fowler-Nordheim regime. This paper extends these ideas to the direct tunneling regime and focuses on differences in interfacial transition regions between Si-SO2 interfaces with, and without monolayer level interface nitridation. Tunneling currents in both the direct and Fowler-Nordheim tunneling regimes are reduced by monolayer level interface nitridation for PMOS and NMOS devices with the same oxide-equivalent thickness. This paper develops a modified barrier layer model based on analysis of XPS results that accounts for these reductions in current in the direct tunneling regime.

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The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

  • H. Yang (a1), H Niimi (a1), Y. Wu (a1) and G. Lucovsky (a1)

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