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Effects of Interfaces on the a-Si:H Schottky Barrier Characteristics

  • Y. M. Li (a1), C. Malone (a2), S. Kumar (a2), C. R. Wronski (a3), H. V. Nguyen (a4) and R. W. Collins (a4)...

Abstract

A detailed study of hydrogenated amorphous silicon (a-Si:H) surfaces during etching and subsequent low temperature (T≤200°C) oxidation was carried out using in-situ and spectroscopic ellipsometry (SE). The microstructural information from SE is correlated with the properties of the corresponding evaporated Pd Schottky barrier structures. Oxide layers thinner than ∼ 10 Å have little effect on the diode characteristics and electron surface recombination velocities. This is consistent with a porous structure for these oxides. Evidence is found from growth kinetics that higher density, compact oxide growth occurs for greater thicknesses. These oxides have a large effect on electron transport and surface recombination velocities consistent with the formation of metal-insulator-semiconductor structures.

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Fortmann, C.M., O’Dowd, J., Newton, N., and Fischer, J., in Stabilities of Amorphous Silicon Alloy Materials and Devices, edited by Stafford, B.L. and Sabisky, E., AIP Conference Proceedings No. 157 (American Institute of Physics, New York, 1987), p. 103.
Wronski, C.R., Optoelectronics Devices and Technologies 4, 167 (1989)
Theeten, J.B. and Aspnes, D.E., Ann. Rev. Mater. Sci. 11, 97 (1981)
Aspnes, D.E., in SPIE Proc. 276, 188 (1981)
5. Gutkowicz-Krusin, D., Wronski, C.R., and Tiedje, T., Appl. Phys. Lett., 38, 87 (1981)
6. The reference data of R.W. Collins appear in: Forouhi, A.R. in: Properties of Amorphous Silicon. 2nd Ed. edited by the EMIS Group, (INSPEC, London, 1989), p. 321.
7. Ponpon, J.P. and Bourdon, B., Solid State Electronics 25, 875 (1982)
8. Drevillon, B. and Vaillant, F., Thin Solid Films 124, 217 (1985)

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Effects of Interfaces on the a-Si:H Schottky Barrier Characteristics

  • Y. M. Li (a1), C. Malone (a2), S. Kumar (a2), C. R. Wronski (a3), H. V. Nguyen (a4) and R. W. Collins (a4)...

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