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Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts

  • B.-Y. Tsaur (a1), D. J. Silversmith (a1), R. W. Mountain (a1) and C. H. Anderson (a1)

Abstract

The properties of PtSi-Si Schottky barrier contacts formed by a new technique employing multilayer metallization are compared with those of contacts prepared by the conventional single-layer metallization method. The multilayer technique permits the formation of very shallow contacts without any limitation being placed on the thickness of the PtSi layer. For a PtSi layer of given thickness the PtSi-Si contact interface obtained by this technique is more uniform than the interface formed by annealing a single layer of platinum on silicon. The interfacial uniformity is independent of PtSi thickness for shallow PtSi-Si contacts produced by the multilayer technique, while for conventional contacts the uniformity decreases with increasing PtSi thickness. Large-area (9.4 × 10−3 cm2) diodes utilizing shallow PtSi-Si contacts about 200 Å deep have been fabricated without guard rings. These diodes exhibit near-ideal forward current-voltage characteristics, low reverse leakage currents (less than 5 nA at −10 V) and high breakdown voltages (over −90 V). These characteristics are superior to those of diodes using conventional PtSi-Si contacts.

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1 Tu, K. N. and Mayer, J. W., Silicide formation. In Poate, J. M., Tu, K. N. and Mayer, J. W. (eds.), Thin Films Interdiffusion and Reactions, Wiley, New York, 1978, pp. 359405.
2 Muta, H., Suzuki, S., Yamada, K., Nagahashi, Y., Tamaka, T., Okabayashi, H. and Kamamura, N., IEEE Trans. Electron Devices, 23 (1976) 1023.
3 Okada, K., Aomura, K., Suzuki, M. and Shiba, H., IEEE J. Solid-State Circuits, 13 (1978) 693.
4 Tu, K. N., Hammer, W. N. and Olowolafe, J. O., J. Appl. Phys., 51 (1980) 1663.
5 van Gurp, G. J., Daams, J. L. C., von Oostrom, A., Augustus, L. J. M. and Tamminga, Y., J. Appl. Phys., 50 (1980) 6915.
6 Tsaur, B.-Y., Silversmith, D. J., Mountain, R. W., Hung, L. S., Lau, S. S. and Sheng, T. T., J. Appl. Phys., 52 (1981) 5243.
7 Lepselter, M. P. and Sze, S. M., Bell Syst. Tech. J., 47 (1967) 196.
8 Sze, S. M., Physics of Semiconductor Devices, Wiley-Interscience, New York, 1969, Chap. 8.
9 Sze, S. M. and Gibbons, G., Solid-State Electron., 9 (1966) 831.
10 Yanagisawa, S. and Fukuyama, T., J. Electrochem. Soc., 127 (1980) 1150.

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