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Effects of Indium on the Properties of N-Type CdS Thin Films Deposited by Spray Pyrolysis

Published online by Cambridge University Press:  26 February 2011

Y. T. Kim ,
S. C. Park  and
S. K. Chung
Y. T. Kim
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Dae-Dog Science Estate, Dae Jeon, Chung-Nam, KOREA
S. C. Park
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Dae-Dog Science Estate, Dae Jeon, Chung-Nam, KOREA
S. K. Chung
Affiliation:
Dept. of Elec. Eng., Ajou University, Suwon, KOREA.
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Abstract

Effects of the doping level of indium impurity on electrical and optical properties of the CdS thin films, prepared with solution-sprayed method have been studied. The density of free carriers can be raised to an order of magnitude higher than that of non-doped case by increasing doping level of indium up to 0.01mole-% while indium doping does not significantly change the mobility from its value in non-doped samples. The optical energy gap is decreased with increasing indium content while the thermal activation energy remains unchanged. The experimental results are discussed in terms of the self compensation and radiative recombination phenomena.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 311
Copyright
Copyright © Materials Research Society 1987

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References

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