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The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon

Published online by Cambridge University Press:  10 February 2011

S. Libertino ,
S. Coffa ,
R. Mosca  and
E. Gombia
S. Libertino
Affiliation:
Dipartimento di Fisica, Università di Catania, Corso Italia 57, 1–95129, Catania, Italy
S. Coffa
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 1–95121, Catania, Italy
R. Mosca
Affiliation:
CNR-MASPEC, Via Chiavari 18a, 1-43100, Parma, Italy
E. Gombia
Affiliation:
CNR-MASPEC, Via Chiavari 18a, 1-43100, Parma, Italy
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Abstract

We have investigated the effects of oxygen codoping and thermal annealing on the deep level spectrum and carrier lifetime of Er implanted crystalline Si. It is found that oxygen codoping produces a dramatic modification in the concentration and energetic position of Er-related deep levels in the Si band gap. In particular the formation of Er-O complexes is shown to produce a promotion from deep to shallow levels. This effect is the major responsible of the enhancement of Er donor behaviour in presence of oxygen and also produces a large increase in the minority carrier lifetime

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 113
Copyright
Copyright © Materials Research Society 1996

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