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Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon

  • Jin Jang (a1), Tae Gon Kim (a1), Song Ok Koh (a1), Hyon Kyun Song (a1), Kyu Chang Park (a1), Moon Hyun Chung (a1) and Sung Chul Kim (a1)...

Abstract

We studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.

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1. Shimizu, I., Hanna, J. and Shirai, H., Mat. Res. Soc. Symp. Proc. 192, 64(1990).
2. Shirai, H.. Das, D., Hanna, J. and Shimizu, I., in Technical Digest of the International PVSEC-5 (Kyoto, Japan, 1990).
3. Das, D., Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys. 30, L239(1991).
4. Shirai, H., Hanna, J. and Shimizu, I., To be published.
5. Asano, A., Appl. Phys. Lett. 56, 533(1990).
6. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81(1978).

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Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon

  • Jin Jang (a1), Tae Gon Kim (a1), Song Ok Koh (a1), Hyon Kyun Song (a1), Kyu Chang Park (a1), Moon Hyun Chung (a1) and Sung Chul Kim (a1)...

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