Skip to main content Accessibility help
×
Home

Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy

  • J. D. Song (a1), Y. M. Park (a1), J. C. Shin (a1), J. G. Lim (a1), Y. J. Park (a1), W. J. Choi (a1), I. K. Han (a1), W. J. Cho (a1), J. I. Lee (a1), H. S. Kim (a2) and C. G. Park (a2)...

Abstract

The influence of growth sequence on optical and structural properties of InAs/GaAs quantum dots (QD) grown by atomic layer epitaxy was investigated systematically. It is found that growth interruption (GI) after In is more effective than non-GI after In in reducing the density of coalescent dots, and reducing the dot width distribution of the QDs. Meanwhile, dot densities are approximately doubled by non-GI after In. GI after As reduces dot height distribution compared with non-GI after As. Generally, GI after In plays a more critical role than GI after As does in formation of the QDs. The sample grown with In/GI/As/GI sequence shows the lowest 300 K-photoluminescence (PL) linewidth (∼30 meV), high PL peak separation between ground and 1st excited level (∼80 meV). From the result, it is known that In/GI/As/GI is the favorable growth sequence among the sample sets. Temperature dependence of PL linewidth shows that the In/GI/As/GI sample is insensitive to cryostat temperature and it is attributed to weak wetting effect. Thinner wetting layers shown in a cross-sectional TEM image supports this.

Copyright

References

Hide All
1. Ledentsov, N. N., Semiconductors 33, 946 (1999) and references in it.
2. Bimberg, D., Grundmann, M., and Ledentsov, N. N., “Quantum Dot Heterostructures”, (JOHN WILEY & SONS, New York, 1999), and references in it.
3. Sanguinetti, S., Mano, T., Oshima, M., Tateno, T., Wakaki, M., and Koguchi, N., Appl. Phys. Lett. 81, 3067 (2002).
4. Tsyrkin, G‥ È., Golubok, A. O., Tipisev, S. Ya., and Ledentsov, N. N., Semiconductors 29, 884 (1995).
5. Bosacchi, A., Frigeri, P., Franchi, S., Allegri, P. and Avanzini, V., J. Cryst. Growth 175/176, 771 (1997).
6. Mukai, K., Ohtsuka, N., Sugawara, M., and Yamazaki, S., Jpn. J. Appl. Phys. 33, L1710 (1994).
7. Guryanov, G. M., et al., Surf. Sci. 352–354, 651 (1996).

Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy

  • J. D. Song (a1), Y. M. Park (a1), J. C. Shin (a1), J. G. Lim (a1), Y. J. Park (a1), W. J. Choi (a1), I. K. Han (a1), W. J. Cho (a1), J. I. Lee (a1), H. S. Kim (a2) and C. G. Park (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed