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Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films

  • D. R. Campbell (a1), S. Mader (a1) and W. K. Chu (a1)

Abstract

Resistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.

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Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films

  • D. R. Campbell (a1), S. Mader (a1) and W. K. Chu (a1)

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