In the metal-induced growth (MIG) process, the poly-Si layer hetero-epitaxially grows from a thin silicide layer, formed by reaction of a metal seed-layer and sputtered silicon, due to an extremely close lattice match between silicon and the metal silicide. The produced poly-Si has shown a promising device quality for photovoltaic applications. Recent results show that the interface of the silicide and poly-Si has a significant effect on the properties of the poly-Si which works as an active layer for photon absorption. In the study of the MIG process, two metals were used as a seed-layer, i.e. Ni and Co. Although CoSi2 has a larger lattice mismatch with Si (1.2%) than does NiSi2 (0.4%), the poly-Si growing from Co has a smoother interface between the poly-Si and silicide, while the one for the Ni seed-layer samples is rather rough. Backscattered XSEM shows that the Ni-contained phase extended into the Si layer by forming long spikes. This might cause crystal defects in the Si layer. The Auger depth profile also showed that the Ni atoms diffuse into the Si layer much more than does the Co. This kind of difference in interface structure causes the different properties of the poly-Si layer. X-ray diffraction (XRD) analysis on the Si layer showed that the Co seed-layer sample had a predominant growth orientation of (220) and the FWHM of 0.2°. The Ni seed-layer samples grew mainly in both <111> and <220> direction, with FWHM of 0.3° and 0.4°, respectively. By comparison, the poly-Si from the Co seed-layer had a higher carrier lifetime of 0.458μs compared to 0.305μs from Ni.