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Effects of Exchange Interaction in Diluted Magnetic Semiconductor Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Jacek Kossut  and
Jacek K. Furdyna
Jacek Kossut
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A.
Jacek K. Furdyna
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A.
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Abstract

The presence of transition metal ions (typically Mn2+) in diluted magnetic semiconductors (DMS) results in a strong spin-spin coupling between localized magnetic moments and band electrons. This leads to considerable modifications of the semiconductor band structure in the presence of strong magnetic fields, e.g., to large spin-dependent shifts of the electronic states at the band edge. This feature is of particular interest in the context of quantum wells involving DMS. Starting with the original idea of a “spin-superlattice”, we concentrate on various opportunities which arise due to the tunability of the depth of the quantum wells by the magnetic field and/or temperature associated with the aforementioned spindependent effects. Thus, we discuss boil-off and freeze-out of electrons to and from quantum wells, selective spin tunneling across the barriers, tunable infrared emitters, enhancement of electronic g-factors in shallow non-magnetic wells surrounded by DMS barriers, the possibility of transition from a type-1 to a type-il superlattice induced by the magnetic field, and quantum oscillations anomalies in DMS quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 97
Copyright
Copyright © Materials Research Society 1987

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References

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