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Effects of ECR N2O-Plasma Nitridation on Thermal Oxide Characteristics

  • Jin-Woo Lee (a1), Jung-Yeal Lee (a1), Deuk-Sung Choi (a1), Sung-Hoi Hur (a1), Choong-Ki Kim (a1) and Chul-Hi Han (a1)...

Abstract

The effects of electron cyclotron resonance (ECR) N2O-plasma nitridation on the characteristics of thermal SiO2 have been investigated. Although the ECR N2O-plasma nitridation was performed at low-temperature(≤400°C), it was found that oxynitride layer can be successfully grown at the Si/SiO2 interface. The atomic concentration of nitrogen near the Si/SiO2 interface was comparable to that of high temperature N2O annealing. The ECR N2O-plasma nitrided thermal SiO2 exhibits higher breakdown field characteristics, higher time-to-breakdown and charge-to-breakdown values in comparison with those of thermal SiO2. In addition, ECR N2O-plasma nitrided thermal SiO2 shows improved charge trapping properties

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Effects of ECR N2O-Plasma Nitridation on Thermal Oxide Characteristics

  • Jin-Woo Lee (a1), Jung-Yeal Lee (a1), Deuk-Sung Choi (a1), Sung-Hoi Hur (a1), Choong-Ki Kim (a1) and Chul-Hi Han (a1)...

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