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Effects of Deposition Power and Temperature on the Properties of Heavily Doped Microcrystalline Silicon Films

Published online by Cambridge University Press:  10 February 2011

A. M. Miri ,
S. G. Chamberlain  and
A. Nathan
A. M. Miri
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario N2L 3G1, Canada
S. G. Chamberlain
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario N2L 3G1, Canada
A. Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario N2L 3G1, Canada
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Abstract

We studied the effect of RF deposition power and temperature on the electrical and structural properties of plasma enhanced chemical vapor deposited (PECVD), heavily doped microcrystalline silicon films (n+μC-Si:H). The film growth process was found to be CVDlike at low powers and PVD-like (Physical Vapor Deposition) at high powers. We show that the film properties strongly depend on the nature of the growth process. We observed that at low temperatures the microcrystalline formation is mainly governed by the presence of hydrogen. This can be improved by increasing the substrate temperature. However, a further increase in substrate temperature tends to reduce hydrogen incorporation into the film and hence decreases the role of hydrogen in the formation of microcrystallites. Resistivities as low as 0.1 Ω.cm were achieved for 500Å thin layers deposited at a relatively low temperature of 220°C and power density of 40mW/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 307
Copyright
Copyright © Materials Research Society 1996

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