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Effects of Coulomb Impurity in Semiconductor Nanowire

Published online by Cambridge University Press:  17 February 2014

Tamar Tchelidze ,
Tamaz Kereselidze  and
Teimuraz Nadareishvili
Tamar Tchelidze
Affiliation:
Ivane Javakhishvili Tbilisi State University, Faculty of Exact and Natural Science, 0179 3 Chavchavadze Ave. Tbilisi,
Tamaz Kereselidze
Affiliation:
Ivane Javakhishvili Tbilisi State University, Faculty of Exact and Natural Science, 0179 3 Chavchavadze Ave. Tbilisi,
Teimuraz Nadareishvili
Affiliation:
Ivane Javakhishvili Tbilisi State University, Faculty of Exact and Natural Science, 0179 3 Chavchavadze Ave. Tbilisi,
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Abstract

We present calculation of electronic structure of impurity in nanowire. Ionization energy of impurities are calculated in dependence on nanowire radius. Direct Hamiltonian matrix diagonalization method with the physically reasonable approximate potential is employed for finding the exact solution of Schrödinger equation in the effective-mass approximation. It is shown that shallow donors are strongly influences by space confinement, which is expressed in sharp increase of ionization energy. Calculations show that effect of space confinement on deep impurities is less pronounced. The obtained results give hope that by selecting optimal value of nanowire radius compensation processes can be suppressed.

Keywords

dopantelectronic structurenanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1659: Symposium SS/XX – Micro- and Nanoscale Systems – Novel Materials, Structures and Devices , 2014 , pp. 199 - 204
Copyright
Copyright © Materials Research Society 2014 

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References

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