Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-25T14:05:19.723Z Has data issue: false hasContentIssue false

Effects of Composition on the Microstructures and Optical Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Lih-Hsiung Chan
Affiliation:
National Tsing Hua University, Department of Materials Science and Engineering, Hsinchu, Taiwan 300, R.O.C.
Wei-Zen Chou
Affiliation:
National Tsing Hua University, Department of Materials Science and Engineering, Hsinchu, Taiwan 300, R.O.C.
Lih-Hsin Chou
Affiliation:
National Tsing Hua University, Department of Materials Science and Engineering, Hsinchu, Taiwan 300, R.O.C.
Get access

Abstract

Hydrogenated amorphous silicon carbide films (a -SiC:H) were prepared from CH4, SiH4, and Ar mixtures by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition (ECR PCVD). The deposition of the thin films was proceeded with the following optimized conditions; microwave power: 900W, Ar flux : 90sccm, and total flux: 113.4 sccm. The substrate temperature was around 100∼120°C during deposition. For comparisons, the relative flux ratio of methane to silane was varied to produce thin films of different compositions to investigate the relationships between the associated compositions of films and their corresponding microstructures and optical properties. Moreover, both film's microstructures and their optical properties were analyzed to find out as to how they are interrelated. Furthermore, the surface morphology and amorphous microstructures were confirmed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM), respectively. And, x-ray Photoelectron Spectroscopy (XPS) was employed to study the relative atomic ratio of C to Si along with the bonding conditions in the thin films. Finally, the Hydrogen concentration and the amounts of C-H and Si-H bonds were determined by Fourier transform infrared spectroscopy(FTIR), while the optical properties were measured by optical spectrophotometer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anderson, D.A. and Spear, W.E., Philos. Mag. 35, 1 (1977).Google Scholar
2. Yamada, A., Kenne, J., Konagai, M., and Takahashi, K., Appl. Phys. Lett. 46, 272 (1985).Google Scholar
3. Jwo, S.C. and Chang, C.Y., IEEE Elect. Device Lett. 7, 689 (1986).Google Scholar
4. Kortright, J. B. and Windt, D. L., Appl. Optics. 27, 2841 (1988).Google Scholar
5. Jwo, S. C., Wu, M. T., Fang, Y. K., Chen, Y.W., Hong, J. W., and Chang, C.Y., IEEE Trans. on Elect. Device. 35, 1279 (1988).Google Scholar
6. Alvarez, F., Fragnito, H. L., Chambouleyron, I., J. Appl. Phys. 63, 244 (1988).Google Scholar
7. Hiramoto, M., Yoshimura, K., Miyao, T., and Yokoyama, M., Appl. Phys. Lett. 58, 114 (1991).Google Scholar
8. Hiramoto, M., Yoshimura, K., and Yokoyama, M., Appl. Phys. Lett. 60, 110 (1992).Google Scholar
9. Akiyama, K., Takimoto, A., and Ogawa, H., Appl. Optics. 32, 6493 (1993).Google Scholar
10. Shimkunas, A.R., Mauger, P.E., Bourget, L.P., Post, R.S., Smith, L., Davis, R.F., Wells, G.M., Cerrina, F., and Mcintosh, R.B., J. Vac. Sci. Technol. B. 9, 3258 (1991).Google Scholar
11. Sussmann, R.S. and Ogden, R., Phil. Mag. B. 44, 137 (1981).Google Scholar
12. Hicks, S.E., Fitzgerald, A.G. and Baker, S.H., Phil. Mag. B. 62, 193 (1990).Google Scholar
13. Petrich, M.A., Gleason, K.K., and Reimer, J.A., Phys. Rev. B. 36, 9722(1987).Google Scholar
14. Lee, WY., J. Appl. Phys. 51, 3365 (1980).Google Scholar
15. Nevin, W.A., Yamagishi, H., Yamaguchi, M., and Tawada, Y., Nature 368, 529 (1994).Google Scholar
16. Chen, G.H., Zhang, F.Q. and Xu, X.X., J. Non-Cryst. Solids. 59&60, 577580 (1983).Google Scholar
17. Kruangam, D., Toyama, T., Hattori, Y., Deguchi, M., Okamoto, H., and Hamakawa, Y., J. NonCryst. Solids. 97&98, 293296 (1987).Google Scholar
18. Loboda, M.J., Amorphous and Crystalline Silicon Carbide IV, edited by Yang, C.Y., Rahman, M.M., and Harris, G.L. (Springer-Verlang, Berlin, 1992), p. 271 Google Scholar
19. Chou, W. Z., MS thesis, National Tsing Hua University, 1996.Google Scholar
20. Echchamikh, E., Azizan, M., Ameziane, E.L., Bennouna, A., Brunel, M., and Nguyen, T.T.A., Solar Energy Material and Solar Cells. 31, 187 (1993).Google Scholar
21. Arce, R., Koropecki, R.R., and Buitrago, R.H., J. Appl. Phys. 66, 4544 (1989).Google Scholar
22. Cullity, B.D., Elements of x-ray Diffraction, 2nd. (Addison-Wesley publisher), p. 506.Google Scholar
23. RC Handbook of Chemistry and Physics, 75th ed. edited by Lide, D.R. (CRC Press, London, 1994).Google Scholar
24. Tauc, J., Optical Properties of Solids, edited by Abales, F. (North-Holland, Amsterdan, 1972), p.279.Google Scholar
25. Mott, N. and , Davis, Electronic Processes in Non-crystalline Materials, 2nd ed. (Clarendon Press, Oxford, 1979).Google Scholar
26. Robertson, J., Phil. Mag. B. 66, 615 (1992).Google Scholar
27. Chou, L. H. and Wang, H. W., J. Appl. Phys. 74, 4673, (1993).Google Scholar