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Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas

Published online by Cambridge University Press:  21 February 2011

Y. Makita ,
T. Iida ,
T. Shima ,
S. Kimura ,
A. Obara ,
K. Harada ,
C.W. Tu ,
S. Uekusa ,
T. Matsumori  and
K. Kudo
...Show all authors
Y. Makita
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
T. Iida
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
T. Shima
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
S. Kimura
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
A. Obara
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
K. Harada
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
C.W. Tu
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
S. Uekusa
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
T. Matsumori
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
K. Kudo
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
K. Tanaka
Affiliation:
ElectrotechnicalLaboratory, 1-1-4 Umezono,Tsukuba, Ibaraki 305, Japan University of California, San Diego, La Jolla, CA 92093-0407, USA Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan. Chiba University, 1-33 Yayoi-cho, inage, Chiba, Chiba 263, Japan
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Abstract

Carbon ion (C+) irradiation during molecular beam epitaxy (MBE) growth of GaAs/GaAs and in0.53.Ga0.47As/InP layers was carried out using CIBMBE (combined ion beam and molecular beam epitaxy) method as a function of wide acceleration energy (Ea=30 eV-30 keV) at a constant ion beam current density. Judging from the monitored current density and the net hole concentration (INA-ND|) obtained from Hall effect measurements, activation rate as high as 88% was achieved for as-grown GaAs layers by C+ ion irradiation of Ea=~170eV. It was revealed that by annealing at 800°C, a slight enhancement (~ 10%) of INA-ND| is practiced for Ea <~ 130eV but a significant increase of INA-ND| is realized for Ea>~lkeV. IN in0.53Ga0.47As/InP layers with increasing Ea, a type conversion of electric conduction from n to p was found to occur at Ea= ~70~100eV. these observations describe that Ea plays a vital role to determine the location of incorporated electrical and optical active impurities in GaAs and inGaAs. Further for comparison, C+-implanted GaAs layers were prepared by high-energy (400 keV) ion-implantation as a function of substrate temperature (T1=RT-600 °C). For C dose concentration of lxl018cm-3\ the highest activation rate of ~20 % was obtained at T1=~150 °C. This result states that CIBMBE method is a superior doping method in view of activation rate of introduced dopants and the formation of damage-free ion-irradiated layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 241
Copyright
Copyright © Materials Research Society 1995

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