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Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas

  • Y. Makita (a1) (a2) (a3) (a4) (a5), T. Iida (a1) (a2) (a3) (a4) (a5), T. Shima (a1) (a2) (a3) (a4) (a5), S. Kimura (a1) (a2) (a3) (a4) (a5), A. Obara (a1) (a2) (a3) (a4) (a5), K. Harada (a1) (a2) (a3) (a4) (a5), C.W. Tu (a1) (a2) (a3) (a4) (a5), S. Uekusa (a1) (a2) (a3) (a4) (a5), T. Matsumori (a1) (a2) (a3) (a4) (a5), K. Kudo (a1) (a2) (a3) (a4) (a5) and K. Tanaka (a1) (a2) (a3) (a4) (a5)...

Abstract

Carbon ion (C+) irradiation during molecular beam epitaxy (MBE) growth of GaAs/GaAs and in0.53.Ga0.47As/InP layers was carried out using CIBMBE (combined ion beam and molecular beam epitaxy) method as a function of wide acceleration energy (Ea=30 eV-30 keV) at a constant ion beam current density. Judging from the monitored current density and the net hole concentration (INA-ND|) obtained from Hall effect measurements, activation rate as high as 88% was achieved for as-grown GaAs layers by C+ ion irradiation of Ea=~170eV. It was revealed that by annealing at 800°C, a slight enhancement (~ 10%) of INA-ND| is practiced for Ea <~ 130eV but a significant increase of INA-ND| is realized for Ea>~lkeV. IN in0.53Ga0.47As/InP layers with increasing Ea, a type conversion of electric conduction from n to p was found to occur at Ea= ~70~100eV. these observations describe that Ea plays a vital role to determine the location of incorporated electrical and optical active impurities in GaAs and inGaAs. Further for comparison, C+-implanted GaAs layers were prepared by high-energy (400 keV) ion-implantation as a function of substrate temperature (T1=RT-600 °C). For C dose concentration of lxl018cm-3\ the highest activation rate of ~20 % was obtained at T1=~150 °C. This result states that CIBMBE method is a superior doping method in view of activation rate of introduced dopants and the formation of damage-free ion-irradiated layers.

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