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Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

  • S. Hahn (a1), M. Arst (a2), K. N. Ritz (a2), S. Shatas (a3), H. J. Stein (a4), Z. U. Rek (a5) and W. A. Tiller (a5)...

Abstract

Effects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

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1. Gosele, U., Materials Research Society Proceedings Volume 59 (1986) p. 419.
2. Hockett, R.S., Fraundorf, P.B., Reed, D.A., Wayne, D.H. and Fraundorf, G.K., Materials Research Society Proceedings Volume 59 (1986) p. 433.
3. Stein, H.J., Hahn, S. and Shatas, S.C., Materials Research Society Proceedings Volume 46 (1985) p. 269.
4. Hahn, S., Shatas, S.C. and Stein, H.J., Materials Research Society Proceedings Volume 59 (1986) p. 287.
5. Tiller, W. A., Hahn, S. and Ponce, F.A., J. Appl. Phys. 59 (1986) 3255.

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Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

  • S. Hahn (a1), M. Arst (a2), K. N. Ritz (a2), S. Shatas (a3), H. J. Stein (a4), Z. U. Rek (a5) and W. A. Tiller (a5)...

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