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Effects of As Doping on Properties of ZnO Films

Published online by Cambridge University Press:  21 March 2011

K. S. Huh ,
D. K. Hwang ,
K. H. Bang ,
M. K. Hong ,
D. H. Lee ,
J. M. Myoung ,
M. S. Oh  and
W. K. Choi
K. S. Huh
Affiliation:
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120–749, Korea
D. K. Hwang
Affiliation:
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120–749, Korea
K. H. Bang
Affiliation:
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120–749, Korea
M. K. Hong
Affiliation:
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120–749, Korea
D. H. Lee
Affiliation:
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120–749, Korea
J. M. Myoung
Affiliation:
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120–749, Korea
M. S. Oh
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
W. K. Choi
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
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Abstract

A series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H11.8.1
Copyright
Copyright © Materials Research Society 2002

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