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Effects of Arsenic Doping on the Solidification Dynamics of Pulsed-Laser-Melted Silicon

Published online by Cambridge University Press:  25 February 2011

Michael O. Thompson ,
P. S. Peercy  and
J. Y. Tsao
Michael O. Thompson
Affiliation:
On leave Dept. of Materials ScienceCornell University, Ithaca,NY14853
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185
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Abstract

The effects of arsenic doping on the solidification dynamics during pulsed melting of silicon have been studied using the transient conductance technique. At As concentrations below 1 at.%, the incorporation of As into the Si lattice results in negligible differences in the solidification dynamics. Between 2 and 7 at.% As, however, the interface velocity is dramatically modified as the liquid-solid interface crosses the As containing region. These velocity changes are consistent with a reduced melting temperature for Si-As alloys. For concentrations of 11 at.% As, the depression in the melting temperature is sufficient to allow the surface to solidify while considerable melt remains buried within the sample. At 16 at.%, the melting temperature is drastically reduced and internal nucleation of melt occurs prior to normal surface melting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 169
Copyright
Copyright © Materials Research Society 1985

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References

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