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The Effects of Amorphous Layer Regrowth on Carbon Activation in GaAs and InP

  • A.J. Moll (a1) (a2), J.W. Ager (a1), K.M. Yu (a1), W. Walukiewicz (a1) and E.E. Haller (a1) (a2)...

Abstract

The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

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The Effects of Amorphous Layer Regrowth on Carbon Activation in GaAs and InP

  • A.J. Moll (a1) (a2), J.W. Ager (a1), K.M. Yu (a1), W. Walukiewicz (a1) and E.E. Haller (a1) (a2)...

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