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The Effect of Yttrium Ion Implantation on the High Temperature Oxidation Properties of NiAl

Published online by Cambridge University Press:  26 February 2011

B.A. Pint
Affiliation:
H.H. Uhlig Corrosion Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139
A. Jain
Affiliation:
ITMMEC, Indian Institute of Technology, Delhi 110016, India
L.W. Hobbs
Affiliation:
H.H. Uhlig Corrosion Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

NiAl was ion implanted with yttrium (2×1016 cm−2) in order to study its effect on the very high temperature (1000–1500°C) oxidation properties. At 1000°C, implanted Y stabilizes the faster growing θ-Al2O3 phase, thus slightly increasing the oxidation rate. At 1200°C, where predominantly α-Al2 O3 is formed with and without Y, there is a factor of 4 reduction in the oxidation rate. However at higher than 1200°C, there is little effect by Y on the oxidation rate. Cyclic testing showed that the Y implant had an imperfect and short-lived improvement on adherence relative to other Y-containing alloys. Variations in aluminum content from 23.5 to 36.0wt%(40–55at%) had little effect on the oxidation properties. Initial experiments at 1500°C with a novel Rh marker indicate that alumina grows at least partially by outward cation diffusion both with and without Y.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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