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Effect of White and Red Light Illumination on the Degradation of a-Si:H Solar Cells

Published online by Cambridge University Press:  15 February 2011

Taraneh Jamali-Beh ,
I.-S Chen ,
H. Liu ,
Y. Lee  and
C. R. Wronski
Taraneh Jamali-Beh
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
I.-S Chen
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
H. Liu
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Y. Lee
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
C. R. Wronski
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Structures were carried out on the degradation of heterojunction and homojunction a-Si:H solar cells, using Xenon arc and tungsten halogen light sources. The degradations were carried out with both white and red light with the intensities being calibrated using the saturated reverse biased photocurrents. Because of the different light intensities, I, involved, comparisons between the different illumination were made after exposure times, t, where I1.8t = constant. The degraded states of the cells were characterized with light I-V, dark I-V, and quantum efficiency measurements. The same degraded states, as indicated by the all three characteristics, are obtained with either white and red light providing the intensities are calibrated using the actual p-i-n cells. It is also found that the empirical relation for obtaining the same degradation found by L. Yang holds for these illuminations being about 1 and 10 suns. Analysis of the dark I-V's using AMPS with a charged defect distributions of defects indicates that with the exposures used, the light induced defects have a close to uniform distribution throughout the i-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 626
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Lechner, P., Rubel, H., Kniffler, N., Proc. of the 10th EC Photovoltaic Solar Energy Conf. (1991), p. 354.Google Scholar
2. Gunes, M., Wronski, C. R., and McMahon, T. J., J. Appl. Phys. 76, 2260 (1994).Google Scholar
3. Arch, J. K., Rubinelli, F. A., Hou, J. Y. and Fonash, S. F., J. Appl. Phys. 69, 7075 (1991).Google Scholar
4. Yang, L., Chen, L., and Catalano, A., Appl. Phys. Lett. 59, 840 (1991).Google Scholar
5. Liu, H., Malone, C. T., Fortmann, C. M., Wronski, C. R., to be presented at this MRS meeting.Google Scholar