Skip to main content Accessibility help
×
Home

The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon

  • M. Stavola (a1), K. M. Lee (a1), J. C. Nabity (a1), P. E. Freeland (a1) and L. C. Kimerling (a1)...

Abstract

ABSTRACT:

We have investigated the effect of stress upon the infrared absorption spectrum of the neutral charge state of the oxygen donor in silicon. Our results show that the central cell of the donor has C, symmetry and that this anisotropy gives rise to a ground state wave function that is constructed from a single pair of conduction band valleys.

Copyright

References

Hide All
[1] Bourret, A. in 13th Int. Conf. on Defects in Semiconductors, edited by Kimerling, L. C. and Parsey, J. M. Jr, (The Metallurgical Soc. of AIME, New York, 1985) p. 129.
[2] Stavola, M. and Snyder, L. C. in Defects in Silicon, edited by Bullis, W. M. and Kimerling, L. C. (Electrochem. Soc., Pennington, NJ, 1983) p. 61.
[3] Oehrlein, G. S. and Corbett, J. W. in Defects in Semiconductors II, edited by Mahajan, S. and Corbett, J. W. (North Holland, New York, 1983) p. 107.
[4] Wruck, D. and Gaworzewski, P., Phys. Stat. Sol. (a) 56, 557 (1979).
[5] Oeder, R. and Wagner, P. in Defects in Semiconductors II, op. cit., p. 171.
[61 Pajot, B., Compain, H., Leroneille, J., and Clerjaud, B., Physica 117B and 118B, 110 (1983).
[7] Ramdas, A. K. and Rodriguez, S., Rep. Prog. Phys. 44, 1297 (1981).
[8] Tekippe, V. J., Chandrasekhar, H. R., Fisher, P., and Ramdas, A. K., Phys. Rev. B 6, 2348 (1972).
[9] Kohn, W. in Solid State Physics vol. 5, edited by Seitz, F. and Turnbull, D. (Academic, New York, 1957) p. 257.
[10] Wagner, P. and Holm, C., 13th Int. Conf. on Defects in Semiconductors, op. cit., p. 677. These authors comment on the absence of stress induced splittings for [001] stress.
[11] Jagannath, C. and Ramdas, A. K., Phys. Rev. B 23,4426 (1981).
[12] Watkins, G. D. and Ham, F. S., Phys. Rev. B 1, 4071 (1970).
[13] Watkins, G. D. suggested that the oxygen donor ground state wave function was constructed from a conduction band valley pair like for Li in Si (ref. 12) at the 13th Int. Conf. on Defects in Semiconductors, Coronado, CA.
[14] Farmer, J. W., Meese, J. M., Henry, P. M., and Lamp, C. D., 13th Int. Conf. on Defects in Semiconductors, op. cit., p. 639.
[15] Benton, J. L., Lee, K. M., Freeland, P. E., and Kimerling, L. C.,13th Int. Conf. on Defects in Semiconductors ., p. 647.
[16] Kaplyanskii, A. A., Sov. Phys. - Opt. Spectrosc. 16, 329 (1964).
[17] Lee, K. M., Watkins, G. D. and Trombetta, J., published in this volume.

The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon

  • M. Stavola (a1), K. M. Lee (a1), J. C. Nabity (a1), P. E. Freeland (a1) and L. C. Kimerling (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.