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Effect Of Trapping On Dielectric Conduction Mechanisms Of ULK/Cu Interconnects

Published online by Cambridge University Press:  31 January 2011

Virginie Verrière ,
Cyril Guedj ,
David Roy ,
Serge Blonkowski  and
Alain Sylvestre
Virginie Verrière
Affiliation:
virginie.verriere@cea.fr, CEA-LETI Minatec, Grenoble, France
Cyril Guedj
Affiliation:
cyril.guedj@cea.fr, CEA-LETI Minatec, Grenoble, France
David Roy
Affiliation:
david.roy@st.com, STMicroelectronics, Crolles, France
Serge Blonkowski
Affiliation:
serge.blonkowski@st.com, STMicroelectronics, Crolles, France
Alain Sylvestre
Affiliation:
alain.sylvestre@grenoble.cnrs.fr, CNRS Grenoble, G2Elab, Grenoble, France
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Abstract

Trapping in low-κ dielectric for interconnects was highlighted by voltage shift in IV current-voltage measurements. It is shown that effects of trapping can impact the extraction of conduction mechanisms. Capacitance measurements made on these materials reveal that trapping is at the origin in the increase of capacitance. The creation of dipoles because of this trapping explains this increase in the value of capacitance.

Keywords

dielectricelectrical propertiesdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D01-04
Copyright
Copyright © Materials Research Society 2009

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References

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