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The Effect of Titanium Silicidation on Type II End-of-Range Dislocation Loops

Published online by Cambridge University Press:  25 February 2011

S.B. Herner ,
V. Krishnamoorthy ,
H.G. Robinson  and
K. S. Jones
S.B. Herner
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-2066b
V. Krishnamoorthy
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-2066b
H.G. Robinson
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-2066b
K. S. Jones
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-2066b
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Abstract

The shrinkage in type II end-of-range dislocation loops was used to determine the relative flux of vacancies from the silicidation of titanium on silicon (100) wafers. A low temperature anneal (700°C 20 min.) in a forming gas ambient formed the initial silicide (approximately 750 Å thick), and several higher temperature anneals with the silicide intact and etched off followed to study the diffusion of the vacancies. The concentration of vacancies captured by the loops after a 900°C 60 minute post silicidation anneal was approximately 7.8 x 1013 /cm2 while the concentration after a 700°C 60 minute post silicidation anneal was only 9 x 1012 /cm2. Removal of the silicide prior to the high temperature post silicidation anneals resulted in fewer vacancies captured by the loops.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 469
Copyright
Copyright © Materials Research Society 1995

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References

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