Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T14:06:14.813Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of thickness of thin film SnO2 based LPG sensors

Published online by Cambridge University Press:  24 May 2011

Divya Haridas ,
K. Sreenivas  and
Vinay Gupta
Divya Haridas
Affiliation:
Dept. of Physics and Astrophysics, University of Delhi, Delhi, India Keshav Mahavidyalaya, Pitampura, University of Delhi, India
K. Sreenivas
Affiliation:
Dept. of Physics and Astrophysics, University of Delhi, Delhi, India
Vinay Gupta
Affiliation:
Dept. of Physics and Astrophysics, University of Delhi, Delhi, India
Get access

Abstract

This paper reports the response characteristics of rf-sputtered SnO2 thin films (of varying thickness) for LPG detection. To monitor and precisely measure leakages, the development of a reliable LPG sensor with improved sensitivity is crucial in preventing fatal accidents. In the present study, thin film of SnO2 is used as the sensing element for LPG sensor. The thickness of a thin film is a very important parameter and determines their main operating characteristics, such as sensor response, rate of response, and working temperature. In the present study, thickness of SnO2 film is varied between 30 nm to 180 nm. The structure, composition and optical properties of SnO2 thin films have been examined by XRD, SEM, AFM and UV-Vis. The crystallite size for 90 nm thin film (for (110) plane) is found to be the smallest ~4-5 nm. Sensor response increases with thickness of the sensing film, with a highest sensor response (~67%) observed for 90 nm thin film and thereafter it decreases. The structural and optical properties clearly support the observed enhanced sensor response for 90 nm thin film.

Keywords

optical propertiesthin filmx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-49
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamazoe, N, Sensors and Actuators B 5 (1991) 7–19 Google Scholar
2. Gopel, W P, Schierbaum, K D, Sensors and Actuators B 26–27 (1995) 1–12.Google Scholar
3. Valachos, D S, Papadopoulos, C A, Avaritsiotis, J N, Sensors and Actuators B 44 (1997) 458–461 Google Scholar
4. Korotcenkov, G, Brinzari, V, Schwank, J, Cerneavschi, A, Mater. Sci. Eng. C 19 (1–2) (2001) 73–77.Google Scholar
5. Haridas, D., Chowdhuri, A., Sreenivas, K. and Gupta, Vinay, Sensors and Actuators B (2010) (Article in Press)Google Scholar
6. Haridas, D., Gupta, V., Sreenivas, K., Bulletin of Mat. Sci., 31 (3), 397 (2008).Google Scholar
7. Haridas, D., Sreenivas, K., Gupta, V., Sens. Actuators B 133, 270 (2008).Google Scholar
8. Ihokura, K, Watson, J, The Stannic Oxide Gas Sensor Principles and Applications, CRC Press, Boca Raton (1994).Google Scholar
9. Miao, H, Ding, C, Luo, H et al. , Microelectron. Eng. 66(2003) 142 Google Scholar
10. Gupta, V. and Mansingh, A., J Appl. Phys. 80 (1996) 1063–1073 Google Scholar
11. Salunkhe, R R, Dhawale, D S, Dubal, D P, Lokhande, C D, Sensors and Actuators B 140 (2009) 86–91.Google Scholar
12. Xu, C, Tamaki, J, Miura, N, Yamazoe, N, J.Electrochem.Soc.Jpn. 58 (1990) 1143–1148.Google Scholar
13. Ogawa, H, Nishikawa, M, Abe, A, J. Appl. Phys. 53 (1982) 4448.Google Scholar