Skip to main content Accessibility help

The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts

  • Dorothea E. Burk (a1), Joseph W. Newkirk (a2) and Myung-Suk Jo (a1)


A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.



Hide All
1. Sai-Halasz, G. A., Short, K. T., and Williams, J. S., IEEE Electron Device Ltrs., EDL–6, 285287, 1985.
2. Yu, Z., Ricco, B., and Dutton, R. W., IEEE Trans, on Electron Devices, ED–31, 773784, 1984.
3. Burk, D. E., Yung, S.-Y. and Jo, M.-S., (submitted for publication).
4. Neugroschel, A., Arienzo, M., Komem, Y., and Isaac, R. D., IEEE Trans, on Electron Devices, ED–32, 807816, 1985.
5. Fossum, J. G., Burk, D. E. and Yung, S.-Y., IEEE Trans, on Electron Devices, ED–32, 18741877, 1985.
6. Yung, S.-Y., Burk, D. E. and Fossum, J. G., presented at the Device Research Conference, Boulder, CO, June, 1985.
7. Getreau, I. E., “Modeling the Bipolar Transistor, Elsevier Scientific Publishers”, New York, 1978.
8. Marcus, R. B. and Sheng, T. T., Transmission Electron Microscopy of Silicon VLSI Circuits and Structures, New York, John Wiley and Sons, 1983.
9. Burk, D. E., Final Report SRC Contract No. 83–01–037, 1984.
10. Schwarz, S. A., Barton, R. W., Ho, C. P., and Helms, C. R., J. Electrochem. Soc, 128, 11011106, 1981.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed