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The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts

  • Dorothea E. Burk (a1), Joseph W. Newkirk (a2) and Myung-Suk Jo (a1)

Abstract

A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.

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2. Yu, Z., Ricco, B., and Dutton, R. W., IEEE Trans, on Electron Devices, ED–31, 773784, 1984.
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