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Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product

Published online by Cambridge University Press:  25 February 2011

N. Wyrsch ,
P. Roca i Cabarrocas ,
S. Wagner  and
V. Viret
N. Wyrsch
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
P. Roca i Cabarrocas
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
V. Viret
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Breguet 2, CH-2000 Neuchatel, Switzerland.
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Abstract

The effect of the depletion region in amorphous silicon Schottky diodes on the mobility-deep trapping lifetime product μτ of electrons has been investigated using transient photoconductivity techniques. We varied the laser wavelength of the exciting laser in time-of-flight (TOF) measurements. The results are correlated with measurements of the internal field by means of the charge collection efficiency, and with measurement of the deep-trapping time by the Delayed-Field TOF technique (DFTOF). We find that the electron μτ decreases from the bulk toward the top surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 329
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Tiedje, T., Cebulka, J.M., Morel, D.L. and Abeles, B., Phys. Rev. Lett. 46, 1425 (1981).Google Scholar
Street, R.A., Phil. Mag. B49, L15 (1984).Google Scholar
3. Spear, W.E., J. non Cryst. Sol. 59&60, 1 (1983).Google Scholar
4. Slobodin, D., Aljishi, S., Okada, Y., Shen, D.S., Chu, V. and Wagner, S., Mat. Res. Soc. Symp. Proc. Vol. 70, 275 (1986).Google Scholar
5. Hecht, K., Z. Physik 77, 235 (1932).Google Scholar
6. Vanderhagen, R. and Longeaud, C., Mat. Res. Soc. Symp. Proc. Vol. 149, 357 (1989).Google Scholar
7. Curtins, H., Wyrsch, N., Favre, M. and Shah, A.V., Plasma Chem. and Plasma Proc. 7, 2267 (1987).Google Scholar
8. Roca i Cabarrocas, P., PhD Thesis, University Paris VII, 1988.Google Scholar
9. Shen, D., PhD Thesis, Princeton University, 1988.Google Scholar
10. Karg, F.H., PhD Thesis, Technical University Munich, 1987.Google Scholar
11. Spear, W.E., Steemers, H.L., Le Comber, P.G. and Gibson, R.A., Phil. Mag. B50, L33 (1984).Google Scholar
12. Curtins, H. and Favre, M., in Advances in Disordered Semiconductors, Vol. 1, Amorphous Silicon and Related Materials, Vol. A (World Scientific, Singapore, 1987) p. 329.Google Scholar
13. Street, R.A. and Winer, K., Mat. Res. Soc. Symp. Proc. Vol. 149, 131 (1989).Google Scholar
14. Hata, N., Roca i Cabarrocas, P., Wyrsch, N., Wagner, S. and Favre, M., Mat. Res. Soc. Symp. Proc, this issue.Google Scholar