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Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product

  • N. Wyrsch (a1), P. Roca i Cabarrocas (a1), S. Wagner (a1) and V. Viret (a2)

Abstract

The effect of the depletion region in amorphous silicon Schottky diodes on the mobility-deep trapping lifetime product μτ of electrons has been investigated using transient photoconductivity techniques. We varied the laser wavelength of the exciting laser in time-of-flight (TOF) measurements. The results are correlated with measurements of the internal field by means of the charge collection efficiency, and with measurement of the deep-trapping time by the Delayed-Field TOF technique (DFTOF). We find that the electron μτ decreases from the bulk toward the top surface.

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Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product

  • N. Wyrsch (a1), P. Roca i Cabarrocas (a1), S. Wagner (a1) and V. Viret (a2)

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