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Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

  • Y. W. Kim (a1), I. K. Kim (a1), N. I. Lee (a1), J. W. Ko (a1), S. T. Ahn (a1), M. Y. Lee (a1) and J. G. Lee (a1)...

Abstract

The effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various temperatures. The TiSi2 film was formed by the solid-state reaction of the Ti film sputtered on the poly-Si film. The thermal stability of the TiSi2 film was evaluated by changes in the sheet resistance and microstructural evolution during furnace anneals. The TiSi2 film on poly-Si with the <110> preferred orientation shows more stable conductivity during high temperature anneals than with the <111> orientation. The surface energy of underlying poly-Si is expected to influence the thermal stability of the TiSi2/poly-Si structure significantly. Better thermal stability of the TiSi2 film can be obtained by the higher surface energy of underlying poly-Si.

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Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

  • Y. W. Kim (a1), I. K. Kim (a1), N. I. Lee (a1), J. W. Ko (a1), S. T. Ahn (a1), M. Y. Lee (a1) and J. G. Lee (a1)...

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