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Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N2 doped Ge2Sb2Te 5 (N-GST) in a Phase-change Random Access Memory

  • Suyoun Lee (a1), Y. J. Song (a1), Y. N. Hwang (a1), S. H. Lee (a1), J. H. Park (a1), K. C. Ryoo (a1), S. J. Ahn (a1), C. W. Jeong (a1), J. H. Oh (a1), J. M. Shin (a1), F. Yeung (a1), W. C. Jeong (a1), Y. T. Kim (a2), J. B. Park (a3), K. H. Koh (a1), G. T. Jeong (a1), H. S. Jeong (a1) and Kinam Kim (a1)...

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With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the effect of the contact between the electrode metal and the chalcogenide glass, N2 doped Ge2Sb2Te5 in this report. We investigated a change of the resistance-programming current pulse (R-I) curve varying the contact size and the electrode material. Also we tested the surface oxidation of the electrode. We found that the programming current, the resistance of the programmed state (“RESET”) and the erased state (“SET”) were highly dependent on the above parameters. These results are presented and a more effective way to the high density PRAM will be proposed.

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[1] Ovshinsky, S. R., “Reversible electrical switching phenomena in disordered structures”, Phys. Rev. Lett. 21, pp. 14501453 (1968).
[2] Lai, S., “Current status of the phase change memory and its future”, IEDM Tech. Dig., pp. 255258 (2003).
[3] Ahn, S. J., “Highly Manufacturable High Density Phase Change Memory of 64Mb and beyond”, Proceedings of IEDM 2004, to be published.
[4] Kim, Y. T., “Programming Characteristics of PRAM”, Proceedings of SSDM 2004, pp. 244∼245 (2004).
[5] Cahill, David G. and Allen, Thomas H., “Thermal conductivity of sputtered and evaporated SiO2 and TiO2 optical coatings”, Appl. Phys. Lett. 65, 309 (1994).
[6] CRC Materials Science and Engineering Handbook, p.281.

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