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Effect of Surface Ambient on Manganese Diffusion in Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

C. H. Wu  and
K. C. Hsieh
C. H. Wu
Affiliation:
Center for Compound Semiconductor Microelectronics and Material Research Laboratory, University of Illinois at Urbana-Champaign, IL 61801
K. C. Hsieh
Affiliation:
Center for Compound Semiconductor Microelectronics and Material Research Laboratory, University of Illinois at Urbana-Champaign, IL 61801
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Abstract

Data are presented showing the effects of diffusion sources, surface encapsulation, and As overpressure on Mn diffusion in GaAs. Four different Mn-containing sources are used, including Mn, Mn,MN3As, and MnAs granules as well as Mn thin film deposited directly onto GaAs substrate. Smooth surface morphology with high surface Mn concentration can be obtained using MnAs (and in certain conditions, Mn3As) as diffusion source; different degrees of surface degradation are observed if otherwise sources are used as diffusion source. Data also show surface encapsulation and As overpressure have significant effects on the reaction between the source and GaAs and the Mn diffusion in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 771
Copyright
Copyright © Materials Research Society 1992

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References

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