Skip to main content Accessibility help
×
Home

Effect of Stoichiometry of TiN Electrode on the Switching Behavior of TiN/HfOx/TiN Structures for Resistive RAM

  • Katrina A. Morgan (a1), Ruomeng Huang (a1), Stuart Pearce (a1), Le Zhong (a2), Liudi Jiang (a2) and C. H. de Groot (a1)...

Abstract

Two types of TiN/HfOx/TiN devices have been fabricated where the top 200nm TiN electrode has been deposited by two different sputtering methods; reactive, using a titanium target in a nitrogen environment, and non-reactive, using a titanium nitride target. Characterization of the materials shows that the reactive TiN is single-phase stoichiometric TiN with a sheet resistance of 7Ω/square. The non-reactive TiN has a sheet resistance of 300Ω/square and was found to contain significant amounts of oxygen. The resistive switching behavior differs for both devices. The reactive stoichiometric TiN device results in bipolar switching with a Roff/Ron ratio of 50. The non-reactive TiN results in unipolar switching with a Roff/Ron ratio of more than 103, however this device shows poor reproducibility. These results show that an oxygen rich layer between the top electrode and insulator affects the Roff value. It supports the theory of oxygen vacancies leading to the formation of conductive filaments.

Copyright

References

Hide All
1. Baek, I. G., Lee, M. S., Seo, D. H., Suh, D. –S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U. –I., Moon, J. T., Electron Devices Meeting, IEDM Technical Digest. IEEE International, 587590(2004)
2. Philip Wong, H. -S., Lee, H. –Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P. –S., Lee, B., Chen, F. T., Tsai, M. –J., Proceedings of the IEEE., 100(6), 19511970 (2012)10.1109/JPROC.2012.2190369
3. Waser, R., Microelectronic Engineering, 86 (7-9), 19251928 (2009)10.1016/j.mee.2009.03.132
4. Lee, H. Y., Chen, P. S., Wu, T. Y., Chen, Y. S., Wang, C. C., Tzeng, P. J., Lin, C. H., Chen, F., Lien, C. H., Tsai, M. –J., Electron Devices Meeting. IEEE International, 14(2008)
5. Tran, X. A., Yu, H. Y., Yeo, Y. C., Wu, L., Liu, W. J., Wang, Z. R., Fang, Z., Pey, K. L., Sun, X. W., Du, A. Y., Nguyen, B. Y., Li, M. F., IEEE Electron Device Letters, 32(3), 396398 (2011)10.1109/LED.2010.2099205
6. Lorenzi, P., Rao, R., Irrera, F., IEEE Transactions of Electron Devices, 60(1), 438443(2013)10.1109/TED.2012.2227324
7. Cagli, C., Buckley, J., Jousseaume, V., Cabout, T., Salaun, A., Grampeix, H., Nodin, J. F., Fields, H., Persico, A., Cluzel, J., Lorenzi, P., Massari, L., Rao, R., Irrera, F., Aussenac, F., Carabasse, C., Coue, M., Calka, P., Martinez, E., Perniola, L., Blaise, P., Fang, Z., Yu, Y. H., Ghibaudo, G., Deleruyelle, D., Bocquet, M., Muller, C., Padovani, A., Pirrotta, O., Vandelli, L., Larcher, L., Reimbold, G., Salvo, B. de, IEDM, IEEE International, 28.7.1 – 28.7.4 (2011)
8. Stefano, F. De, Houssa, M., Afanas’ev, v. V., Kittl, J. A., Jurczak, M., Stesmans, A., Thin Solid Films, 533, 1518 (2013)10.1016/j.tsf.2012.12.097
9. Warwick, M. E. A., Hyett, g., Ridley, I., Laffir, F. R., Olivero, C., Chapon, P., Binions, R., Solar Energy Materials and Solar Cells, 118, 149156 (2013)10.1016/j.solmat.2013.08.018
10. Sawa, A., Materials Today, 11(6), 2836 (2008)10.1016/S1369-7021(08)70119-6

Keywords

Effect of Stoichiometry of TiN Electrode on the Switching Behavior of TiN/HfOx/TiN Structures for Resistive RAM

  • Katrina A. Morgan (a1), Ruomeng Huang (a1), Stuart Pearce (a1), Le Zhong (a2), Liudi Jiang (a2) and C. H. de Groot (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed