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The Effect of Sample Substrate on the Structural Properties of Co-Deposited Films of A-Ge:H*

Published online by Cambridge University Press:  25 February 2011

S.J. Jones ,
W.A. Turner ,
D. Pang  and
W. Paul
S.J. Jones
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W.A. Turner
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D. Pang
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

Results from structural measurements on r.f. glow discharge produced a-Ge:H films have been found to be substrate dependent. The variations in the results were found to depend on both the substrate temperature, Ts, and the substrate yield strength. Differential scanning calorimetry results were particularly affected by these parameters. For films prepared at Ts = 150°C, the DSC spectra contain two exothermic peaks when the films are deposited on low yield strength substrates while only one exothermic peak is present for films deposited on high yield strength substrates. One exothermic DSC peak is seen in spectra for all films prepared at Ts = 300°C no matter what substrates were used. This DSC spectral dependence is attributed to differences in the microstructure of films deposited at the two substrate temperatures, as seen in TEM micrographs. X-ray diffraction measurements performed on films annealed to various temperatures show that all of the exothermic DSC peaks described above are associated with the crystallization process. Thus, for the films prepared at low Ts, crystallization is either a one or two step process depending on the yield strength of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 553
Copyright
Copyright © Materials Research Society 1990

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Footnotes

*

Research supported by SERI contract XX-8-18131-1-1 and NSF Grant DMR-86-14003.

References

REFERENCES

1 Mackenzie, K.D., Eggert, J.R., Leopold, D.J., Li, Y.-M., Lin, S., and Paul, W., Phys. Rev. B 31, 2198 (1985).Google Scholar
2 Jones, S.J., Lee, S.M., Turner, W.A., and Paul, W., in Amorphous Silicon Technology-1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., and LeComber, P.G. (Mat. Res. Soc. Symp. Proc. 149, Pittsburgh, PA, 1989), pp. 45–50.Google Scholar
3 Temkin, R.J. and Paul, W., Proceedings of the Fifth International Conference on Amorphous and Liquid Semiconductors, edited by Stuke, J. and Brenig, W. (Taylor & Francis LTD, London, 1974), p. 1193.Google Scholar
4 Chen, H.S. and Turnbull, D., J. Appl. Phys. 40, 4214 (1969).Google Scholar
5 Xu, X., Morimoto, A., Kumeda, M. and Shimizu, T., Jap. J. Appl. Phys. 26, L1818 (1987).Google Scholar
6 Stutzmann, M., Appl. Phys. Lett. 47, 21 (1985).Google Scholar