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Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

  • W. K. Loke (a1), S. F. Yoon (a1), T. K. Ng (a1), S. Z. Wang (a1) and W. J. Fan (a1)...

Abstract

Rapid thermal annealing (RTA) of 1000Å GaNAs films grown on (100) oriented GaAs substrate by radio frequency (RF) plasma assisted solid-source molecular beam epitaxy was studied by low-temperature photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD). Samples with nitrogen content of 13 and 2.2% have shown an overall blueshift in energy of 67.7meV and an intermediate redshift of 42.2meV in the PL spectra when subjected to RTA at 525–850°C for 10min. It is also shown that the sample, which is annealed at temperature range of 700–750°C, has the highest photoluminescence efficiency (1.7–2.1 times increase in integrated PL intensity as compared to the as-grown sample). Reciprocal space mapping of the as-grown GaNAs samples obtained by using triple-crystal HRXRD shows the presence of interstitially incorporated of N atoms with no lattice relaxation in the direction parallel to the growth surface. These results have significant implication on the growth and post-growth treatment of nitride compound semiconductor materials for high performance optoelectronics devices.

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Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

  • W. K. Loke (a1), S. F. Yoon (a1), T. K. Ng (a1), S. Z. Wang (a1) and W. J. Fan (a1)...

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