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Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-x Ge x System

  • X. Sun (a1), M. S. Dresselhaus (a1), K. L. Wang (a2) and M. O. Tanner (a2)

Abstract

The Si/Si1-x Ge x quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-x Ge x quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-x Ge x quantum-well structures.

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Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-x Ge x System

  • X. Sun (a1), M. S. Dresselhaus (a1), K. L. Wang (a2) and M. O. Tanner (a2)

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