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Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With A XeCl Excimer Laser And Solar Cells *

  • R. T. Young (a1), J. Narayan (a2), W. H. Christie (a2), G. A. van der LEEDEN (a3), D. E. Rothe (a3) and R. L. Sandstrom (a3)...

Abstract

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AMI have been fabricated using glow discharge implantation and XeCl laser annealing.

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Operated by Union Carbide Corporation under contract W–7405–eng–26 with the U.S. Department of Energy.

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Analytical Chemistry Division

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Present address: Guest scientist, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830

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Research sponsored jointly by the Solar Energy Research Institute under contract BS–0–9078–1 and by Helionetics, Inc.

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References

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1. Young, R. T., van der Leeden, G. A., Narayan, J., Christie, W. H., Wood, R. F., Rothe, D. E., and Levatter, J. I., IEEE Elec. Dev. Lett. EDL–3, 280 (1982).
2. Lowndes, D. H., Cleland, J. W., Christie, W. H., Eby, R. E., Jellison, G. E. Jr., Narayan, J., Westbrook, R. D., Wood, R. F., Nilson, J. A., and Dass, S. C., Appl. Phys. Lett. 41, 938 (1982).
3. Young, R. T., van der Leeden, G. A., Wood, R. F., and Westbrook, R. D., Proceedings of the 16th IEEE Photovoltaic Specialists Conference (September 27–30, 1982, San Diego, CA) (to be published).
4. Jellison, G. E. Jr. and Modine, F. A., Appl. Phys. Lett. 41, 180 (1982).
5. Young, R. T., van der Leeden, G. A., Westbrook, R. D., Sandstrom, R. L., and Levatter, J. I., Proceedings of the 16th IEEE Photovoltaic Specialists Conference (September 27–30, 1982, San Diego, CA) (to be published).
6. Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).
7. Narayan, J., Young, R. T., Wood, R. F., and Christie, W. H., Appl. Phys. Lett. 33, 338 (1978).
8. Young, R. T., Wood, R. F., and Christie, W. H., J. Appl. Phys. 53, 1178 (1982).

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