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Effect of Pressure on Self Diffusion in Crystalline Silicon

  • M. J. Aziz (a1), E. Nygren (a2), W. H. Christie (a1), C. W. White (a1) and D. Turnbull (a2)...

Abstract

The effect of pressure on self diffusion in crystalline silicon is being studied using 30Si as a tracer. Diffusion experiments have been carried out in the pressure range of 1 to 35000 atmospheres at 1000°C. The 30Si is observed to diffuse faster at high pressures, indicating a negative activation volume.

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[1] Hu, S.M., in Atomic Diffusion in Semiconductors, ed. Shaw, D. (Plenum, London, 1972).
[2] Boyd, F.R. and England, J.L., J. Geophys. Res. 65, 741 (1960).10.1029/JZ065i002p00741
[3] Lesher, C.E., private communication.
[4] Nygren, E., Aziz, M.J., Turnbull, D., Hays, J.F., Poate, J.M., Jacobson, D.C., and Hull, R., these proceedings.
[5] Lee, D.H. and Mayer, J.W., Proc. IEEE 62, 1241 (1974).10.1109/PROC.1974.9603
[6] Kalinowsky, L. and Seguin, R., Appl. Phys. Lett. 35, 211 (1979).

Effect of Pressure on Self Diffusion in Crystalline Silicon

  • M. J. Aziz (a1), E. Nygren (a2), W. H. Christie (a1), C. W. White (a1) and D. Turnbull (a2)...

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