Skip to main content Accessibility help
×
Home

The Effect of Post-Deuteration on Metastability in a-Si:H

  • N.H. Nickel (a1), W.B. Jackson (a1) and C.C. Tsai (a1)

Abstract

Hydrogenated amorphous silicon films were deuterated through a sequence of 1h exposures to a remote deuterium plasma at 350°C. The concentration profiles of hydrogen and deuterium were determined by SIMS at various times during the exposure sequence. The defect density in state A, after deuteration and after illumination with white light were determined using CPM measurements following each 1h exposure sequence. We find that post-deuteration does not alter the defect density in state A, change the Urbach edge, nor significantly alter metastable defect formation. Intense light soaking increases the defect density by about 5 × 10l6cm−3 independent of the total H + D concentration. These results suggest that D always enters the sample in pairs pinning the hydrogen chemical potential which supports the idea of a negative U system for hydrogen and deuterium. Despite an increase of Si-H bonds by as much as 3 × 1021cm−3, the annealed dangling bond density and the weak Si-Si bond density did not change.This suggests that the density of weak Si-Si bonds as well as the dangling bond density is determined by equilibration with strong Si-Si bonds through the interchange of H. The implications of these results for H bonding will be discussed.

Copyright

References

Hide All
1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292, (1977).
2. Nickel, N., Fuhs, W. and Mell, H., J. Non-cryst. Sol. 137&138, 1221,(1991).
3. Jackson, W.B. and Kakalios, J., in Amorphous Silicon and Related Materials, edited by Fritzsche, Hellmut (World Scientific, Singapore, 1988), p. 247.
4. Street, R.A., Hack, M. and Jackson, W.B., Phys. Rev. B 37, 4209, (1988).
5. Pierz, K., Fuhs, W. and Mell, H., Phil. Mag. B 63, 123, (1991).
6. Street, R.A., Kakalios, J., Tsai, C.C. and Hayes, T.M., Phys. Rev. B 35, 1316, (1987).
7. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B 32, 23, (1985).
8. Dersch, H., Stuke, J. and Beichler, J., Appl. Phys. Lett. 38, 456, (1980).
9. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81, (1978).
10. Beyer, W., Herion, J. and Wagner, H., J. Non-cryst. Sol. 114, 217, (1989).
11. Santos, P.V., Johnson, N.M. and Street, R.A., Phys. Rev. Lett. 67, 2686, (1991).
12. Mahan, A.H. and Vanecek, M.,Proceedings of the International Meeting on Stability of Amorphous Silicon Materials and Solar Cells, edited by Stafford, B. (AIP Proceedings Vol. 234, Denver 1991), p. 195.
13. Johnson, N.M., Nebel, C.E., Santos, P.V., Jackson, W.B., Street, R.A., Stevens, K.S. and Walker, J., Appl. Phys. Lett. 59, 1443, (1991).
14. Johnson, N.M., inHydrogen in Semiconductors, Semiconductors and Semimetals, edited by PanKove, J. L. and Johnson, N.M. (Academic, San Diego, 1991), Vol. 34, p. 113.
15. Santos, P.V. and Jackson, W.B., Phys. Rev. B.46, 4595, (1992).
16. Boyce, J.B., Johnson, N.M., Ready, S.E. and Walker, J., Phys. Rev. B 46. 4308, (1992).
17. Jackson, W.B., Santos, P.V. and Tsai, C.C., Phys. Rev. B in print.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed