Skip to main content Accessibility help

The Effect of Post-Anodization Chemical Etching on Porous Silicon Investigated by Means of Photoluminescence and Ir Spectroscopy

  • Nobutomo Uehara (a1), Tetsuya Yamazaki (a1), Akiharu Kobayashi (a1), Shinji Fujihara (a1), Masato Ohmukai (a1) and Yasuo Tsutsumi (a1)...


We studied the effect of post-anodization chemical etching on porous silicon by means of photoluminescence (PL), Fourier transform infrared (FTIR) absorption and Raman spectroscopy. We performed these measurements with repeating etching and then observed the variation of the spectra. On the basis of the correlation between PL and FTIR spectral changes, the PL emission at 660 and 730 nm in PL spectra stems from Si-H2, and Si-H clusters at surface, respectively. Raman spectra show a close relation between PL emission at 850 nm and nanocrystallites in porous silicon. In addition, chemical etching contributes to the promotion of nanocrystallites and to dissolving them.



Hide All
[1] Canham, L. T., AppI. Phys. Lett. 57, 1046 (1990).
[2] Ueno, T., IEEE Electron Device Lett. 12, 691 (1991).
[3] Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).
[4] Takagahara, T. and Takeda, K., Phys. Rev. B 46, 15578 (1992).
[5] Zoubir, N. Hadj, et al. , Appl. Phys. Lett. 65, 82 (1994).
[6] Brandt, M. S., et al. , Solid State Commun. 81, 307 (1991).
[7] Liu, S., et al. , Phys. Rev. B 49, 10318 (1994).
[8] Tsuboi, T., et al. , Solid State Commun. 109, 195 (1999).
[9] Ogata, Y., et al. , J. Electrochem.Soc. 142, 195 (1995).
[10] Ogata, Y., et al. , J. Electrochem.Soc. 142, 1595 (1995).
[11] Kato, Y., et al. , Jpn. i. Appl. Phys. 27, L1406 (1988).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed