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Effect of Plasma Treatment of the Tco on a-Si Solar Cell Performance

  • F. Demichelis (a1), R. Galloni (a2), A. Madan (a3), C.F. Pirri (a1), P. Rava (a4), M. Ruth (a2), R.E.I. Schropp (a5), C. Summonte (a2) and E. Tresso (a1)...

Abstract

Single junction a-Si p-i-n solar cells have been deposited by an Ultra High Vacuum (UHV) Multichamber PECVD system reaching an efficiency of 10.1% over 0.1 cm2 and 9.7% over 1 cm2. The effect of hydrogen treatments on the performance of the solar cells was studied on two different types of SnO2 coated substrates and was correlated with the I-V characteristics under AM1.5 (100 mW cm-2) illumination and the spectral response of the devices. The results show that modifications at the TCO/p-layer interface due to the hydrogen plasma treatments are strongly dependent on the initial characteristics of the TCO.

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[1] Major, S., Kumar, S., Bhatnagar, M., Chopra, K.L. - Appl. Phys. Lett. 49, 395 (1986)
[2] Shiratsuchi, R., Hirata, M., Misonou, M., Kawahara, H. - Proc. 3rd PVSEC (Tokio, 1987), p. 619
[3] Kumar, S., Drevillon, B. - J. Appl. Phys. 65, 3025 (1989)
[4] Sinencio, F.S., Williams, R. - J. Appl. Phys. 54, 2757 (1983)

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