Skip to main content Accessibility help
×
Home

Effect of Particle Size During Tungsten Chemical Mechanical Polishing

  • Marc Bielmann (a1), Uday Mahajan (a1) and Rajiv K. Singh (a2)

Abstract

Abrasive particle size plays a critical role in controlling the polishing rate and the surface roughness during chemical mechanical polishing (CMP) of interconnect materials during semiconductor processing. Earlier reports on the effect of particle size on polishing of silica show contradictory conclusions. We have conducted controlled measurements to determine the effect of alumina particle size during polishing of tungsten. Alumina particles of similar phase and shape with size varying from 0.1 μm to 10 μm diameter have been used in these experiments. The polishing experiments showed that the local roughness of the polished tungsten surfaces was insensitive to alumina particle size. The tungsten removal rate was found to increase with decreasing particle size and increased solids loading. These results suggest that the removal rate mechanism is not a scratching type process, but may be related to the contact surface area between particles and polished surface controlling the reaction rate. The concept developed in our work showing that the removal rate is controlled by the contact surface area between particles and polished surface is in agreement with the different explanations for tungsten removal.

Copyright

References

Hide All
1. Kaufman, F. B., Thompson, D.B., Broadie, R. E., Jaso, M. A., Guthrie, W. L., Pearson, D. J., and Small, M. B., J. Electrochem. Soc. 138, 3460(1991)10.1149/1.2085434
2. Stein, D.J., Hetherington, D., Guilinger, T., and Cecchi, J.L., J. Electrochem. Soc. 145, 3190(1998)10.1149/1.1838785
3. Preston, F., J. Soc. Glass Technol. 11 247(1927)
4. Brown, N.J., Baker, P.C., and Maney, R.T., Proc. SPIE 306, 42(1981)10.1117/12.932717
5. Jairath, R., Desai, M., Stell, M., Tolles, R., and Scherber-Brewer, D., in Advanced Metallization for Devices and Circuits-Science, Technology and Manufacturability, edited by S.P, Murarka, A., Katz, K.N., Tu and Maex, K. (Mater. Res. Soc. Proc. 337, 121(1994)
6. Cook, L.M., J. Non-cryst. Solids 120, 152(1990)10.1016/0022-3093(90)90200-6
7. Sivaram, S., Bath, M. H.M., Lee, E., Leggett, R., and Tolles, R., Proc. SRC Topical Research Conference on Chem-Mechanical Polishing for Planarization, SRC, Research Triangle Park, NC (1992), proc. Vol. #P92008
8. Izumitani, T., in Treatise on Materials Science and Technology, eds. M., Tomozawa and R., Doremus, Academic Press, New York, (1979), p. 115
9. Steigerwald, J. M., Murarka, S. P. and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley &; Sons, Inc.(1997)10.1002/9783527617746

Effect of Particle Size During Tungsten Chemical Mechanical Polishing

  • Marc Bielmann (a1), Uday Mahajan (a1) and Rajiv K. Singh (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed