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Effect of Oxygen on the Textured Diamond Growth over Nickel Substrates

Published online by Cambridge University Press:  21 February 2011

R. Ramesham ,
M. F. Rose ,
R. F. Askew  and
M. Bozack
R. Ramesham
Affiliation:
Space Power Institute. 231 Leach Center, Auburn University, Auburn, AL 36849–5320
M. F. Rose
Affiliation:
Space Power Institute. 231 Leach Center, Auburn University, Auburn, AL 36849–5320
R. F. Askew
Affiliation:
Space Power Institute. 231 Leach Center, Auburn University, Auburn, AL 36849–5320
M. Bozack
Affiliation:
Physics Department, Auburn University, Auburn, AL 36849–5320
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Abstract

Microwave plasma has been used to grow diamond films using CH4 and H2 over nickel substrates. Nucleation of the diamond has been achieved by manual scratching and ultrasonic agitation of the substrates. The substrate was left in the H 2 microwave plasma to remove any oxide film present prior to the diamond growth. According to SEM the morphology of the grown films was (100) textured over the entire surface. Our interest is to study the effect of O2 on the growth rate and the morphology of as-deposited diamond films. Infact, O2 has a tendency to preferentially etch the diamond (etch rate: 111 > 110 >100). Injection of O2 into the reaction mixture could enhance the 100 texture further. Raman analysis confirms the deposited films as diamond. Effect of O2 on the nature of the films and the characterization of as-deposited films is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 329
Copyright
Copyright © Materials Research Society 1994

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References

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