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Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM

  • Neeraj Panwar (a1), Pankaj Kumbhare (a1), Ajit K. Singh (a2), N. Venkataramani (a2) and Udayan Ganguly (a1)...

Abstract

We have demonstrated that pulsed laser deposition (PLD) conditions, i.e. O2 partial pressure (pO2) and temperature (T), enable control over the polarity of resistance switching in PCMO (Pr0.7C0.3MnO3) i.e. unipolar resistive switching (URS) vs. bipolar resistive switching (BRS). We observe by detailed physical characterization that BRS occurs in poly-crystalline thin films while URS is seen in amorphous films – indicating the materials origin of URS vis-a-vis BRS. BRS shows attractive lower voltage operation, no forming and lower variability than URS.

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Keywords

Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM

  • Neeraj Panwar (a1), Pankaj Kumbhare (a1), Ajit K. Singh (a2), N. Venkataramani (a2) and Udayan Ganguly (a1)...

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