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Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films

  • G. S. Sudhir (a1) (a2), Y. Peyrot (a1), J. Krüger (a1), Y. Kim (a1), R. Klockenbrink (a1), C. Kisielowski (a1), M. D. Rubin (a3), E. R. Weber (a1) (a3), W. Kriegseis (a4) and B. K. Meyer (a4)...

Abstract

This study analyzes the impact of most common impurities and dopants on the c lattice parameter for thin films of Gallium Nitride (GaN) deposited on basal plane sapphire. Both Mg (∼1017 cm-3) and Zn (∼3 × 1020 cm-3) doping were found to expand the c lattice parameter as much as +0.38% and +0.62%, respectively. On the contrary, Oxygen up to concentrations 9 1021 cm-3 is shown to replace N in GaN thin films reducing the c parameter only by a small amount. Incorporation of Si leads to a large decrease of the c parameter which can not be attributed to the different size of Ga and Si atom. It is suggested that doping alters the film stoichiometry by a predicted Fermi level dependence of defect formation energies. The impact of stoichiometry on c lattice parameter and the effect of hydrostatic strain on resistivity in undoped and doped GaN is discussed.

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Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films

  • G. S. Sudhir (a1) (a2), Y. Peyrot (a1), J. Krüger (a1), Y. Kim (a1), R. Klockenbrink (a1), C. Kisielowski (a1), M. D. Rubin (a3), E. R. Weber (a1) (a3), W. Kriegseis (a4) and B. K. Meyer (a4)...

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