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Effect of Mechanical Stress on Polycrystalline Diamond Schottky Diode I-V Characteristics

  • G. Zhao (a1), E. M. Charlson (a1), E. J. Charlson (a1), T. Stacy (a1), J. Meese (a1), G. Popovici (a2) and M. Prelas (a2)...

Abstract

Schottky diodes to be used for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode. At selected values of constant forward biased current, a linear relationship between voltage and stress, for stress less than 10 N was observed. The stress sensitivity of the diode was as high as 0.74 V/N at 1 mA forward bias. This study shows that polycrystalline diamond Schottky diodes are stress sensitive devices and have potential as mechanical sensors.

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Effect of Mechanical Stress on Polycrystalline Diamond Schottky Diode I-V Characteristics

  • G. Zhao (a1), E. M. Charlson (a1), E. J. Charlson (a1), T. Stacy (a1), J. Meese (a1), G. Popovici (a2) and M. Prelas (a2)...

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