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Effect of Marangoni Convection on InSb Single Crystal Growth by Horizontal Bridgman Method

Published online by Cambridge University Press:  21 March 2011

K. Kodera ,
A. Kinoshita ,
K. Arafune ,
Y. Nakae  and
A. Hirata
K. Kodera
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3–4-1, Shinjuku-ku, Tokyo, 169–8555, Japan
A. Kinoshita
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3–4-1, Shinjuku-ku, Tokyo, 169–8555, Japan
K. Arafune
Affiliation:
Research Institute of Electronics, Shizuoka Univ., Hamamatsu, Shizuoka 432, JAPAN
Y. Nakae
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3–4-1, Shinjuku-ku, Tokyo, 169–8555, Japan
A. Hirata
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3–4-1, Shinjuku-ku, Tokyo, 169–8555, Japan
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Abstract

It is necessary to clarify the effect of Marangoni convection on single crystal growth from a melt in order to improve the quality of the grown crystal. Particularly, the deviation of crystalmelt (C-M) interface from a planar shape is a major problem because it may deteriorate the quality of the grown crystal. In this paper, we investigated the effect of thermal and solutal Marangoni convection on C-M interface shape in an In-Sb binary system by the horizontal Bridgman (HB) method. The C-M interface concavity strongly depends on the cooling rate and the temperature gradient under uniform concentration distribution conditions in the melt. A large concavity was observed at low cooling rates and high temperature gradient conditions. The concavity was found to be caused by thermal Marangoni convection, by taking Péclet number into account. Then, we varied the composition of the In-Sb binary system to induce solutal Marangoni convection intentionally. The C-M interface was kept planar in case solutal Marangoni convection occurred in the direction opposite to the thermal one. Therefore, we believe that the utilization of solutal Marangoni convection will be a new control technique to make the C-M interface planar for the HB system. From these results, it was clarified that Marangoni convection plays a significant role in the HB crystal growth system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H8.6.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Rayleigh, , Lord, , Phil. Mag. 32, 529–546 (1916)Google Scholar
2. Eyer, A., Leist, H., and Nitsche, R., J. Crystal Growth, 71, 173–182 (1985)Google Scholar
3. Schwabe, D., and Metzger, J., J. Crystal Growth, 97, 23–33 (1989)Google Scholar
4. Yao, Y. L., Liu, F., and Hu, W. R., Int. J. Heat Mass Transfer, 39, 2539–2544 (1996)Google Scholar
5. Arafune, K., and Hirata, A., J. Crystal Growth ,197, 811–817 (1999)Google Scholar
6. Arafune, K., Yamamoto, K., and Hirata, A., Int. J. Heat Mass Transfer, 44(13), 2405–2411 (2001)Google Scholar
7. Liang, M. C., Lan, C. W., J. Crystal Growth, 180, 587–596 (1997)Google Scholar
8. Lan, C. W., Su, M.C., Liang, M.C., J. Crystal Growth 208, 717–725 (2000)Google Scholar
9. Arafune, K., Sugiura, M., and Hirata, A., J. Chem. Eng. Japan, 32, 104–109 (1999)Google Scholar