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Effect of Low Energy Implantation on the Properties of Ti/Ni/Au Contacts to n-SiC

Published online by Cambridge University Press:  17 March 2015

Patrick W Leech ,
Anthony S Holland ,
Geoffrey K Reeves ,
Yue Pan ,
Mark Ridgway  and
Phillip Tanner
Patrick W Leech
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Anthony S Holland
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Geoffrey K Reeves
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Yue Pan
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Mark Ridgway
Affiliation:
Electronic Materials Engineering, Australian National University, Canberra, ACT, Australia.
Phillip Tanner
Affiliation:
Griffith University, Queensland Microtechnology Facility, Brisbane, Australia.
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Abstract

The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 x 10−6 Ω.cm2. The value of ρc increased significantly at an implant dose of 1 x 1015 ions/cm2. The dependence of ρc on ion dose has been measured using both C and P implant species.

Keywords

ion-implantationsemiconductingmicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1743: Symposium DD/WW – Materials and Radiation Effects for Advanced Nuclear Technologies , 2015 , mrsf14-1743-ww12-10
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Lu, W., Collins, W.E., Mitchel, W.C. in SiC Power Materials, Springer, Ed. Chen, Z.C. (2004).Google Scholar
Leiten, R. R. et al. ., Appl. Phys. Lett., 92, 022106 (2008).CrossRefGoogle Scholar
Hui, G., Yi-Men, Z., Yu-Ming, Z., Chinese Physics, 15(9), 2142 (2006).CrossRefGoogle Scholar
Liu, F., Li, C.H., Pisano, A.P., Carraro, C., Maboudia, R., JVSTA, A28, 1259 (2010).Google Scholar
Grodzicki, M., Chrzanowski, J., Mazur, P., Zuber, S., Ciszewski, A., Optica Applicata, 39(4), 765 (2009).Google Scholar
Wang, L., Dimitrijev, S., Han, J., Iocopi, F., Hold, L., Tanner, P., Harrison, H.B., Thin Solid Films, 519 6443 (2011).CrossRefGoogle Scholar
Pan, Y., Reeves, G. K., Leech, P. W., Holland, A. S., IEEE Trans. Electron Devices, 60, 1202, (2013).CrossRefGoogle Scholar
Song, X., Biscarrat, J., Michaud, J-F., Cayrel, F., Zielinksi, M., Chassagne, T., Portail, M., E, Collard, Alquier, D., Nucl. Instr. Meth. Phys. Res. B269 2020 (2011).CrossRefGoogle Scholar
Chunjuan, L., Su, L., Jingjing, F., Rong, W., Journal of Semiconductors, 33(3) 036002–1 (2012).Google Scholar
Takeda, T., Tomita, A., Matsui, T., Isshiki, T., Materials Science Forum, 778–780, 350 (2014).Google Scholar