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Effect of Low Energy Hydrogen Implants on Damage Caused by Argon Ion Beam Etching

Published online by Cambridge University Press:  22 February 2011

A. Climent ,
J.-S. Wang  and
S. J. Fonash
A. Climent
Affiliation:
visiting Fulbright Scholar from Universidad Autonoma de Madrid, Cantoblanco, Madrid 34, Spain
J.-S. Wang
Affiliation:
on leave from Chungnam National University, Yusung Daeduk Chungnam, Korea.
S. J. Fonash
Affiliation:
Engineering Sciences Program, The Pennsylvania State University, University Park, PA 16802
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Abstract

The dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 613
Copyright
Copyright © Materials Research Society 1984

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References

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