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Effect of Light-Soaking on the Density of States and Carrier Dynamics of a-Si1-xGex:H Alloys

  • Thomas Unold (a1), J. David Cohen (a1) and Charles M. Fortmann (a2)

Abstract

We have used transient and steady-state junction capacitance methods to gain information about the density of states in the mobility gap of silicon-germanium alloys a-Si1-xGex:H (0.25<×<1.0). With those measurements we are also able to differentiate between minority and majority carrier processes in the alloys. We find that the (μτ)p is considerably reduced from its value in a-Si:H, even for films with small germanium concentrations (x=0.25). The density of states deduced from the optical spectra shows two distinct features above and below midgap for all concentrations, which both increase with light-soaking. Light-soaking also sharply reduces the (μτ)p.

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Effect of Light-Soaking on the Density of States and Carrier Dynamics of a-Si1-xGex:H Alloys

  • Thomas Unold (a1), J. David Cohen (a1) and Charles M. Fortmann (a2)

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